{
  "metadata": {
    "title": "Semiconductor Physics: Fundamentals to Advanced Applications",
    "description": "A comprehensive learning graph for semiconductor physics covering quantum mechanical foundations, crystal structure, band theory, carrier statistics, transport, generation-recombination, p-n junctions, MOS structures, bipolar and field-effect transistors, optoelectronic devices, advanced materials (III-V, quantum structures, 2D materials), power devices, fabrication concepts, and characterization methods.",
    "creator": "Dan Mccreary",
    "date": "2026-06-02",
    "version": "1.0",
    "format": "Learning Graph JSON v1.0",
    "schema": "https://raw.githubusercontent.com/dmccreary/learning-graphs/refs/heads/main/src/schema/learning-graph-schema.json",
    "license": "CC BY-NC-SA 4.0 DEED"
  },
  "groups": {
    "FOUND": {
      "classifierName": "Foundation Concepts",
      "color": "SteelBlue",
      "font": {
        "color": "white"
      }
    },
    "CRYST": {
      "classifierName": "Crystal Structure and Defects",
      "color": "DarkGreen",
      "font": {
        "color": "white"
      }
    },
    "QM": {
      "classifierName": "Quantum Mechanics",
      "color": "DarkSlateBlue",
      "font": {
        "color": "white"
      }
    },
    "BAND": {
      "classifierName": "Band Theory",
      "color": "Indigo",
      "font": {
        "color": "white"
      }
    },
    "STAT": {
      "classifierName": "Carrier Statistics and Equilibrium",
      "color": "Teal",
      "font": {
        "color": "white"
      }
    },
    "TRANS": {
      "classifierName": "Carrier Transport",
      "color": "DodgerBlue",
      "font": {
        "color": "white"
      }
    },
    "GREC": {
      "classifierName": "Generation and Recombination",
      "color": "DarkGoldenrod",
      "font": {
        "color": "white"
      }
    },
    "PNJ": {
      "classifierName": "P-N Junction and Diodes",
      "color": "Gold",
      "font": {
        "color": "black"
      }
    },
    "MIS": {
      "classifierName": "Metal-Semiconductor and MOS",
      "color": "MediumPurple",
      "font": {
        "color": "white"
      }
    },
    "BJT": {
      "classifierName": "Bipolar Junction Transistors",
      "color": "Crimson",
      "font": {
        "color": "white"
      }
    },
    "FET": {
      "classifierName": "Field-Effect Transistors",
      "color": "DarkRed",
      "font": {
        "color": "white"
      }
    },
    "OPT": {
      "classifierName": "Optoelectronic Devices",
      "color": "LimeGreen",
      "font": {
        "color": "black"
      }
    },
    "ADV": {
      "classifierName": "Advanced Materials and Structures",
      "color": "DarkOrchid",
      "font": {
        "color": "white"
      }
    },
    "PWR": {
      "classifierName": "Power and Microwave Devices",
      "color": "Tomato",
      "font": {
        "color": "white"
      }
    },
    "FAB": {
      "classifierName": "Fabrication Concepts",
      "color": "OliveDrab",
      "font": {
        "color": "white"
      }
    },
    "CHAR": {
      "classifierName": "Characterization and Modeling",
      "color": "DimGray",
      "font": {
        "color": "white"
      }
    }
  },
  "nodes": [
    {
      "id": 1,
      "label": "Semiconductor Definition",
      "group": "FOUND",
      "shape": "box"
    },
    {
      "id": 2,
      "label": "Conductor vs Insulator vs Semiconductor",
      "group": "FOUND"
    },
    {
      "id": 3,
      "label": "Elemental Semiconductors",
      "group": "FOUND"
    },
    {
      "id": 4,
      "label": "Compound Semiconductors",
      "group": "FOUND"
    },
    {
      "id": 5,
      "label": "Silicon Material Properties",
      "group": "FOUND"
    },
    {
      "id": 6,
      "label": "Germanium Material Properties",
      "group": "FOUND"
    },
    {
      "id": 7,
      "label": "Gallium Arsenide Properties",
      "group": "FOUND"
    },
    {
      "id": 8,
      "label": "Indium Phosphide Properties",
      "group": "FOUND"
    },
    {
      "id": 9,
      "label": "Gallium Nitride Properties",
      "group": "FOUND"
    },
    {
      "id": 10,
      "label": "Silicon Carbide Properties",
      "group": "FOUND"
    },
    {
      "id": 11,
      "label": "Bandgap Energy",
      "group": "FOUND",
      "shape": "box"
    },
    {
      "id": 12,
      "label": "Direct Bandgap",
      "group": "BAND"
    },
    {
      "id": 13,
      "label": "Indirect Bandgap",
      "group": "BAND"
    },
    {
      "id": 14,
      "label": "Energy Band Diagram",
      "group": "BAND"
    },
    {
      "id": 15,
      "label": "Conduction Band",
      "group": "BAND"
    },
    {
      "id": 16,
      "label": "Valence Band",
      "group": "BAND"
    },
    {
      "id": 17,
      "label": "Forbidden Energy Gap",
      "group": "BAND"
    },
    {
      "id": 18,
      "label": "Crystal Lattice",
      "group": "CRYST",
      "shape": "box"
    },
    {
      "id": 19,
      "label": "Unit Cell",
      "group": "CRYST"
    },
    {
      "id": 20,
      "label": "Primitive Cell",
      "group": "CRYST"
    },
    {
      "id": 21,
      "label": "Basis Vectors",
      "group": "CRYST"
    },
    {
      "id": 22,
      "label": "Simple Cubic Structure",
      "group": "CRYST"
    },
    {
      "id": 23,
      "label": "Face-Centered Cubic Structure",
      "group": "CRYST"
    },
    {
      "id": 24,
      "label": "Body-Centered Cubic Structure",
      "group": "CRYST"
    },
    {
      "id": 25,
      "label": "Diamond Cubic Structure",
      "group": "CRYST"
    },
    {
      "id": 26,
      "label": "Zincblende Structure",
      "group": "CRYST"
    },
    {
      "id": 27,
      "label": "Wurtzite Structure",
      "group": "CRYST"
    },
    {
      "id": 28,
      "label": "Miller Indices",
      "group": "CRYST"
    },
    {
      "id": 29,
      "label": "Crystal Planes",
      "group": "CRYST"
    },
    {
      "id": 30,
      "label": "Crystal Directions",
      "group": "CRYST"
    },
    {
      "id": 31,
      "label": "Reciprocal Lattice",
      "group": "CRYST"
    },
    {
      "id": 32,
      "label": "First Brillouin Zone",
      "group": "CRYST"
    },
    {
      "id": 33,
      "label": "Wigner-Seitz Cell",
      "group": "CRYST"
    },
    {
      "id": 34,
      "label": "Lattice Constant",
      "group": "CRYST"
    },
    {
      "id": 35,
      "label": "Lattice Mismatch",
      "group": "CRYST"
    },
    {
      "id": 36,
      "label": "Bragg Diffraction Law",
      "group": "CRYST"
    },
    {
      "id": 37,
      "label": "X-Ray Diffraction",
      "group": "CRYST"
    },
    {
      "id": 38,
      "label": "Electron Diffraction",
      "group": "CRYST"
    },
    {
      "id": 39,
      "label": "Covalent Bonding in Semiconductors",
      "group": "CRYST",
      "shape": "box"
    },
    {
      "id": 40,
      "label": "Ionic Bonding",
      "group": "CRYST",
      "shape": "box"
    },
    {
      "id": 41,
      "label": "Metallic Bonding",
      "group": "CRYST",
      "shape": "box"
    },
    {
      "id": 42,
      "label": "Van der Waals Forces",
      "group": "CRYST",
      "shape": "box"
    },
    {
      "id": 43,
      "label": "Hybridization SP3",
      "group": "CRYST"
    },
    {
      "id": 44,
      "label": "Point Defects",
      "group": "CRYST"
    },
    {
      "id": 45,
      "label": "Vacancies",
      "group": "CRYST"
    },
    {
      "id": 46,
      "label": "Interstitials",
      "group": "CRYST"
    },
    {
      "id": 47,
      "label": "Substitutional Impurities",
      "group": "CRYST"
    },
    {
      "id": 48,
      "label": "Frenkel Defects",
      "group": "CRYST"
    },
    {
      "id": 49,
      "label": "Schottky Defects",
      "group": "CRYST"
    },
    {
      "id": 50,
      "label": "Dislocations",
      "group": "CRYST"
    },
    {
      "id": 51,
      "label": "Edge Dislocations",
      "group": "CRYST"
    },
    {
      "id": 52,
      "label": "Screw Dislocations",
      "group": "CRYST"
    },
    {
      "id": 53,
      "label": "Stacking Faults",
      "group": "CRYST"
    },
    {
      "id": 54,
      "label": "Grain Boundaries",
      "group": "CRYST"
    },
    {
      "id": 55,
      "label": "Surface States",
      "group": "CRYST"
    },
    {
      "id": 56,
      "label": "Interface States",
      "group": "CRYST"
    },
    {
      "id": 57,
      "label": "Dangling Bonds",
      "group": "CRYST"
    },
    {
      "id": 58,
      "label": "Wave-Particle Duality",
      "group": "QM",
      "shape": "box"
    },
    {
      "id": 59,
      "label": "de Broglie Wavelength",
      "group": "QM"
    },
    {
      "id": 60,
      "label": "Heisenberg Uncertainty Principle",
      "group": "QM"
    },
    {
      "id": 61,
      "label": "Schrodinger Equation",
      "group": "QM"
    },
    {
      "id": 62,
      "label": "Time-Dependent Schrodinger Equation",
      "group": "QM"
    },
    {
      "id": 63,
      "label": "Time-Independent Schrodinger Equation",
      "group": "QM"
    },
    {
      "id": 64,
      "label": "Wave Function",
      "group": "QM"
    },
    {
      "id": 65,
      "label": "Probability Density",
      "group": "QM"
    },
    {
      "id": 66,
      "label": "Quantum Normalization",
      "group": "QM"
    },
    {
      "id": 67,
      "label": "Particle in a Box",
      "group": "QM"
    },
    {
      "id": 68,
      "label": "Infinite Potential Well",
      "group": "QM"
    },
    {
      "id": 69,
      "label": "Finite Potential Well",
      "group": "QM"
    },
    {
      "id": 70,
      "label": "Quantum Tunneling",
      "group": "QM"
    },
    {
      "id": 71,
      "label": "Tunnel Probability",
      "group": "QM"
    },
    {
      "id": 72,
      "label": "WKB Approximation",
      "group": "QM"
    },
    {
      "id": 73,
      "label": "Hydrogen Atom Model",
      "group": "QM"
    },
    {
      "id": 74,
      "label": "Atomic Orbitals",
      "group": "QM"
    },
    {
      "id": 75,
      "label": "Quantum Numbers",
      "group": "QM"
    },
    {
      "id": 76,
      "label": "Principal Quantum Number",
      "group": "QM"
    },
    {
      "id": 77,
      "label": "Angular Momentum Quantum Number",
      "group": "QM"
    },
    {
      "id": 78,
      "label": "Magnetic Quantum Number",
      "group": "QM"
    },
    {
      "id": 79,
      "label": "Spin Quantum Number",
      "group": "QM",
      "shape": "box"
    },
    {
      "id": 80,
      "label": "Pauli Exclusion Principle",
      "group": "QM"
    },
    {
      "id": 81,
      "label": "Electron Spin",
      "group": "QM"
    },
    {
      "id": 82,
      "label": "Spin-Orbit Coupling",
      "group": "QM"
    },
    {
      "id": 83,
      "label": "Perturbation Theory",
      "group": "QM"
    },
    {
      "id": 84,
      "label": "Variational Method",
      "group": "QM"
    },
    {
      "id": 85,
      "label": "Kronig-Penney Model",
      "group": "QM"
    },
    {
      "id": 86,
      "label": "Bloch Theorem",
      "group": "QM"
    },
    {
      "id": 87,
      "label": "Bloch Wave Functions",
      "group": "QM"
    },
    {
      "id": 88,
      "label": "Crystal Momentum",
      "group": "BAND"
    },
    {
      "id": 89,
      "label": "Periodic Potential",
      "group": "QM"
    },
    {
      "id": 90,
      "label": "Band Gap Origin",
      "group": "BAND"
    },
    {
      "id": 91,
      "label": "Free Electron Model",
      "group": "BAND",
      "shape": "box"
    },
    {
      "id": 92,
      "label": "Nearly-Free Electron Model",
      "group": "BAND"
    },
    {
      "id": 93,
      "label": "Tight-Binding Model",
      "group": "BAND"
    },
    {
      "id": 94,
      "label": "Linear Combination of Atomic Orbitals",
      "group": "BAND"
    },
    {
      "id": 95,
      "label": "E-k Dispersion Relation",
      "group": "BAND"
    },
    {
      "id": 96,
      "label": "Effective Mass Approximation",
      "group": "BAND"
    },
    {
      "id": 97,
      "label": "Longitudinal Effective Mass",
      "group": "BAND"
    },
    {
      "id": 98,
      "label": "Transverse Effective Mass",
      "group": "BAND"
    },
    {
      "id": 99,
      "label": "Density-of-States Effective Mass",
      "group": "BAND"
    },
    {
      "id": 100,
      "label": "Conductivity Effective Mass",
      "group": "BAND"
    },
    {
      "id": 101,
      "label": "Hole Concept",
      "group": "BAND"
    },
    {
      "id": 102,
      "label": "Hole Effective Mass",
      "group": "BAND"
    },
    {
      "id": 103,
      "label": "Heavy Holes",
      "group": "BAND"
    },
    {
      "id": 104,
      "label": "Light Holes",
      "group": "BAND"
    },
    {
      "id": 105,
      "label": "Split-Off Band",
      "group": "BAND"
    },
    {
      "id": 106,
      "label": "Spin-Orbit Splitting",
      "group": "BAND"
    },
    {
      "id": 107,
      "label": "Fermi Energy",
      "group": "STAT",
      "shape": "box"
    },
    {
      "id": 108,
      "label": "Fermi Level",
      "group": "STAT"
    },
    {
      "id": 109,
      "label": "Fermi-Dirac Distribution",
      "group": "STAT"
    },
    {
      "id": 110,
      "label": "Maxwell-Boltzmann Distribution",
      "group": "STAT",
      "shape": "box"
    },
    {
      "id": 111,
      "label": "Bose-Einstein Distribution",
      "group": "STAT"
    },
    {
      "id": 112,
      "label": "Density of States 3D",
      "group": "BAND"
    },
    {
      "id": 113,
      "label": "Density of States 2D",
      "group": "BAND"
    },
    {
      "id": 114,
      "label": "Density of States 1D",
      "group": "BAND"
    },
    {
      "id": 115,
      "label": "Density of States 0D",
      "group": "BAND"
    },
    {
      "id": 116,
      "label": "Effective Density of States",
      "group": "STAT"
    },
    {
      "id": 117,
      "label": "Conduction Band Effective DOS",
      "group": "STAT"
    },
    {
      "id": 118,
      "label": "Valence Band Effective DOS",
      "group": "STAT"
    },
    {
      "id": 119,
      "label": "Intrinsic Carrier Concentration",
      "group": "STAT"
    },
    {
      "id": 120,
      "label": "Intrinsic Fermi Level",
      "group": "STAT"
    },
    {
      "id": 121,
      "label": "Temperature Dependence ni",
      "group": "STAT"
    },
    {
      "id": 122,
      "label": "Law of Mass Action",
      "group": "STAT"
    },
    {
      "id": 123,
      "label": "Electron Concentration Formula",
      "group": "STAT"
    },
    {
      "id": 124,
      "label": "Hole Concentration Formula",
      "group": "STAT"
    },
    {
      "id": 125,
      "label": "Charge Neutrality Condition",
      "group": "STAT"
    },
    {
      "id": 126,
      "label": "N-Type Doping",
      "group": "STAT"
    },
    {
      "id": 127,
      "label": "P-Type Doping",
      "group": "STAT"
    },
    {
      "id": 128,
      "label": "Donor Atoms",
      "group": "STAT"
    },
    {
      "id": 129,
      "label": "Acceptor Atoms",
      "group": "STAT"
    },
    {
      "id": 130,
      "label": "Group V Dopants in Silicon",
      "group": "STAT"
    },
    {
      "id": 131,
      "label": "Group III Dopants in Silicon",
      "group": "STAT"
    },
    {
      "id": 132,
      "label": "Phosphorus as Donor",
      "group": "STAT"
    },
    {
      "id": 133,
      "label": "Arsenic as Donor",
      "group": "STAT"
    },
    {
      "id": 134,
      "label": "Antimony as Donor",
      "group": "STAT"
    },
    {
      "id": 135,
      "label": "Boron as Acceptor",
      "group": "STAT"
    },
    {
      "id": 136,
      "label": "Gallium as Acceptor",
      "group": "STAT"
    },
    {
      "id": 137,
      "label": "Aluminum as Acceptor",
      "group": "STAT"
    },
    {
      "id": 138,
      "label": "Indium as Acceptor",
      "group": "STAT"
    },
    {
      "id": 139,
      "label": "Ionization Energy",
      "group": "STAT"
    },
    {
      "id": 140,
      "label": "Complete Ionization",
      "group": "STAT"
    },
    {
      "id": 141,
      "label": "Freeze-Out Regime",
      "group": "STAT"
    },
    {
      "id": 142,
      "label": "Extrinsic Regime",
      "group": "STAT"
    },
    {
      "id": 143,
      "label": "Intrinsic Regime Temperature",
      "group": "STAT"
    },
    {
      "id": 144,
      "label": "Majority Carriers",
      "group": "STAT"
    },
    {
      "id": 145,
      "label": "Minority Carriers",
      "group": "STAT"
    },
    {
      "id": 146,
      "label": "Extrinsic Carrier Concentration",
      "group": "STAT"
    },
    {
      "id": 147,
      "label": "Degenerate Semiconductor",
      "group": "STAT"
    },
    {
      "id": 148,
      "label": "Non-Degenerate Semiconductor",
      "group": "STAT"
    },
    {
      "id": 149,
      "label": "Compensation Doping",
      "group": "STAT"
    },
    {
      "id": 150,
      "label": "Net Doping Concentration",
      "group": "STAT"
    },
    {
      "id": 151,
      "label": "Fermi Level in N-Type",
      "group": "STAT"
    },
    {
      "id": 152,
      "label": "Fermi Level in P-Type",
      "group": "STAT"
    },
    {
      "id": 153,
      "label": "Temperature Dependence of Fermi Level",
      "group": "STAT"
    },
    {
      "id": 154,
      "label": "Drift Current",
      "group": "TRANS"
    },
    {
      "id": 155,
      "label": "Drift Velocity",
      "group": "TRANS"
    },
    {
      "id": 156,
      "label": "Carrier Mobility",
      "group": "TRANS"
    },
    {
      "id": 157,
      "label": "Electron Mobility",
      "group": "TRANS"
    },
    {
      "id": 158,
      "label": "Hole Mobility",
      "group": "TRANS"
    },
    {
      "id": 159,
      "label": "Low-Field Mobility",
      "group": "TRANS"
    },
    {
      "id": 160,
      "label": "High-Field Mobility",
      "group": "TRANS"
    },
    {
      "id": 161,
      "label": "Velocity Saturation",
      "group": "TRANS"
    },
    {
      "id": 162,
      "label": "Saturation Velocity",
      "group": "TRANS"
    },
    {
      "id": 163,
      "label": "Hot Carriers",
      "group": "TRANS"
    },
    {
      "id": 164,
      "label": "Lattice Scattering",
      "group": "TRANS"
    },
    {
      "id": 165,
      "label": "Phonon Scattering",
      "group": "TRANS"
    },
    {
      "id": 166,
      "label": "Acoustic Phonon Scattering",
      "group": "TRANS"
    },
    {
      "id": 167,
      "label": "Optical Phonon Scattering",
      "group": "TRANS"
    },
    {
      "id": 168,
      "label": "Intervalley Scattering",
      "group": "TRANS"
    },
    {
      "id": 169,
      "label": "Ionized Impurity Scattering",
      "group": "TRANS"
    },
    {
      "id": 170,
      "label": "Neutral Impurity Scattering",
      "group": "TRANS"
    },
    {
      "id": 171,
      "label": "Surface Roughness Scattering",
      "group": "TRANS"
    },
    {
      "id": 172,
      "label": "Alloy Scattering",
      "group": "TRANS"
    },
    {
      "id": 173,
      "label": "Matthiessen Rule",
      "group": "TRANS"
    },
    {
      "id": 174,
      "label": "Mobility Temperature Dependence",
      "group": "TRANS"
    },
    {
      "id": 175,
      "label": "Mobility Doping Dependence",
      "group": "TRANS"
    },
    {
      "id": 176,
      "label": "Diffusion Current",
      "group": "TRANS"
    },
    {
      "id": 177,
      "label": "Diffusion Coefficient",
      "group": "TRANS"
    },
    {
      "id": 178,
      "label": "Einstein Relation",
      "group": "TRANS"
    },
    {
      "id": 179,
      "label": "Total Current Density",
      "group": "TRANS"
    },
    {
      "id": 180,
      "label": "Drift-Diffusion Model",
      "group": "TRANS"
    },
    {
      "id": 181,
      "label": "Resistivity",
      "group": "TRANS"
    },
    {
      "id": 182,
      "label": "Conductivity",
      "group": "TRANS"
    },
    {
      "id": 183,
      "label": "Sheet Resistance",
      "group": "TRANS"
    },
    {
      "id": 184,
      "label": "Hall Effect",
      "group": "TRANS"
    },
    {
      "id": 185,
      "label": "Hall Coefficient",
      "group": "TRANS"
    },
    {
      "id": 186,
      "label": "Hall Voltage",
      "group": "TRANS"
    },
    {
      "id": 187,
      "label": "Hall Mobility",
      "group": "TRANS"
    },
    {
      "id": 188,
      "label": "Van der Pauw Method",
      "group": "TRANS"
    },
    {
      "id": 189,
      "label": "Magnetoresistance",
      "group": "TRANS"
    },
    {
      "id": 190,
      "label": "Piezoelectric Effect",
      "group": "TRANS"
    },
    {
      "id": 191,
      "label": "Piezoresistance Effect",
      "group": "TRANS"
    },
    {
      "id": 192,
      "label": "Continuity Equation",
      "group": "TRANS"
    },
    {
      "id": 193,
      "label": "Ambipolar Transport",
      "group": "TRANS"
    },
    {
      "id": 194,
      "label": "Ambipolar Diffusion Coefficient",
      "group": "TRANS"
    },
    {
      "id": 195,
      "label": "Minority Carrier Lifetime",
      "group": "GREC"
    },
    {
      "id": 196,
      "label": "Minority Carrier Diffusion Length",
      "group": "GREC"
    },
    {
      "id": 197,
      "label": "Recombination Rate",
      "group": "GREC"
    },
    {
      "id": 198,
      "label": "Generation Rate",
      "group": "GREC"
    },
    {
      "id": 199,
      "label": "Direct Recombination",
      "group": "GREC"
    },
    {
      "id": 200,
      "label": "Band-to-Band Recombination",
      "group": "GREC"
    },
    {
      "id": 201,
      "label": "Radiative Recombination",
      "group": "GREC"
    },
    {
      "id": 202,
      "label": "Radiative Recombination Coefficient",
      "group": "GREC"
    },
    {
      "id": 203,
      "label": "Shockley-Read-Hall Recombination",
      "group": "GREC"
    },
    {
      "id": 204,
      "label": "Trap-Assisted Recombination",
      "group": "GREC"
    },
    {
      "id": 205,
      "label": "Trap Density",
      "group": "GREC"
    },
    {
      "id": 206,
      "label": "Trap Energy Level",
      "group": "GREC"
    },
    {
      "id": 207,
      "label": "Capture Cross Section",
      "group": "GREC"
    },
    {
      "id": 208,
      "label": "Auger Recombination",
      "group": "GREC"
    },
    {
      "id": 209,
      "label": "Auger Coefficient",
      "group": "GREC"
    },
    {
      "id": 210,
      "label": "Surface Recombination",
      "group": "GREC"
    },
    {
      "id": 211,
      "label": "Surface Recombination Velocity",
      "group": "GREC"
    },
    {
      "id": 212,
      "label": "Optical Absorption",
      "group": "GREC"
    },
    {
      "id": 213,
      "label": "Absorption Coefficient",
      "group": "GREC"
    },
    {
      "id": 214,
      "label": "Optical Generation Rate",
      "group": "GREC"
    },
    {
      "id": 215,
      "label": "Photoconductivity",
      "group": "GREC"
    },
    {
      "id": 216,
      "label": "Quasi-Fermi Levels",
      "group": "GREC"
    },
    {
      "id": 217,
      "label": "Quasi-Fermi Level Splitting",
      "group": "GREC"
    },
    {
      "id": 218,
      "label": "Low-Level Injection",
      "group": "GREC"
    },
    {
      "id": 219,
      "label": "High-Level Injection",
      "group": "GREC"
    },
    {
      "id": 220,
      "label": "Injection Level",
      "group": "GREC"
    },
    {
      "id": 221,
      "label": "Excess Carriers",
      "group": "GREC"
    },
    {
      "id": 222,
      "label": "P-N Junction",
      "group": "PNJ"
    },
    {
      "id": 223,
      "label": "Junction Formation",
      "group": "PNJ"
    },
    {
      "id": 224,
      "label": "Depletion Region",
      "group": "PNJ"
    },
    {
      "id": 225,
      "label": "Depletion Approximation",
      "group": "PNJ"
    },
    {
      "id": 226,
      "label": "Built-In Potential",
      "group": "PNJ"
    },
    {
      "id": 227,
      "label": "Contact Potential",
      "group": "PNJ"
    },
    {
      "id": 228,
      "label": "Electric Field in Depletion Region",
      "group": "PNJ"
    },
    {
      "id": 229,
      "label": "Potential Distribution in Junction",
      "group": "PNJ"
    },
    {
      "id": 230,
      "label": "Charge Distribution in Junction",
      "group": "PNJ"
    },
    {
      "id": 231,
      "label": "Depletion Width",
      "group": "PNJ"
    },
    {
      "id": 232,
      "label": "One-Sided Abrupt Junction",
      "group": "PNJ"
    },
    {
      "id": 233,
      "label": "Linearly Graded Junction",
      "group": "PNJ"
    },
    {
      "id": 234,
      "label": "Forward Bias",
      "group": "PNJ"
    },
    {
      "id": 235,
      "label": "Reverse Bias",
      "group": "PNJ"
    },
    {
      "id": 236,
      "label": "Zero Bias Equilibrium",
      "group": "PNJ"
    },
    {
      "id": 237,
      "label": "Band Diagram Forward Bias",
      "group": "PNJ"
    },
    {
      "id": 238,
      "label": "Band Diagram Reverse Bias",
      "group": "PNJ"
    },
    {
      "id": 239,
      "label": "Minority Carrier Injection",
      "group": "PNJ"
    },
    {
      "id": 240,
      "label": "Ideal Diode Equation",
      "group": "PNJ"
    },
    {
      "id": 241,
      "label": "Shockley Equation",
      "group": "PNJ"
    },
    {
      "id": 242,
      "label": "Diode Saturation Current",
      "group": "PNJ"
    },
    {
      "id": 243,
      "label": "Diode Ideality Factor",
      "group": "PNJ"
    },
    {
      "id": 244,
      "label": "Generation-Recombination Current",
      "group": "PNJ"
    },
    {
      "id": 245,
      "label": "Diffusion Current in Diode",
      "group": "PNJ"
    },
    {
      "id": 246,
      "label": "Tunneling Current in Diode",
      "group": "PNJ"
    },
    {
      "id": 247,
      "label": "Ohmic Region Diode",
      "group": "PNJ"
    },
    {
      "id": 248,
      "label": "Forward Voltage Drop",
      "group": "PNJ"
    },
    {
      "id": 249,
      "label": "Reverse Saturation Current",
      "group": "PNJ"
    },
    {
      "id": 250,
      "label": "Reverse Breakdown",
      "group": "PNJ"
    },
    {
      "id": 251,
      "label": "Avalanche Breakdown",
      "group": "PNJ"
    },
    {
      "id": 252,
      "label": "Impact Ionization",
      "group": "PNJ"
    },
    {
      "id": 253,
      "label": "Ionization Coefficients",
      "group": "PNJ"
    },
    {
      "id": 254,
      "label": "Multiplication Factor",
      "group": "PNJ"
    },
    {
      "id": 255,
      "label": "Zener Breakdown",
      "group": "PNJ"
    },
    {
      "id": 256,
      "label": "Zener Effect",
      "group": "PNJ"
    },
    {
      "id": 257,
      "label": "Zener Voltage",
      "group": "PNJ"
    },
    {
      "id": 258,
      "label": "Junction Capacitance",
      "group": "PNJ"
    },
    {
      "id": 259,
      "label": "Depletion Capacitance",
      "group": "PNJ"
    },
    {
      "id": 260,
      "label": "Diffusion Capacitance",
      "group": "PNJ"
    },
    {
      "id": 261,
      "label": "Small-Signal Diode Model",
      "group": "PNJ"
    },
    {
      "id": 262,
      "label": "Diode Conductance",
      "group": "PNJ"
    },
    {
      "id": 263,
      "label": "Transient Response Diode",
      "group": "PNJ"
    },
    {
      "id": 264,
      "label": "Charge Storage in Diode",
      "group": "PNJ"
    },
    {
      "id": 265,
      "label": "Reverse Recovery Time",
      "group": "PNJ"
    },
    {
      "id": 266,
      "label": "Minority Carrier Storage",
      "group": "PNJ"
    },
    {
      "id": 267,
      "label": "Diode Switching Speed",
      "group": "PNJ"
    },
    {
      "id": 268,
      "label": "Heterojunction",
      "group": "PNJ"
    },
    {
      "id": 269,
      "label": "Band Alignment Types",
      "group": "PNJ"
    },
    {
      "id": 270,
      "label": "Type I Heterojunction",
      "group": "PNJ"
    },
    {
      "id": 271,
      "label": "Type II Heterojunction",
      "group": "PNJ"
    },
    {
      "id": 272,
      "label": "Type III Heterojunction",
      "group": "PNJ"
    },
    {
      "id": 273,
      "label": "Anderson Rule",
      "group": "MIS"
    },
    {
      "id": 274,
      "label": "Band Discontinuity",
      "group": "MIS"
    },
    {
      "id": 275,
      "label": "Conduction Band Offset",
      "group": "MIS"
    },
    {
      "id": 276,
      "label": "Valence Band Offset",
      "group": "MIS"
    },
    {
      "id": 277,
      "label": "Graded Heterojunction",
      "group": "PNJ"
    },
    {
      "id": 278,
      "label": "Work Function",
      "group": "MIS"
    },
    {
      "id": 279,
      "label": "Electron Affinity",
      "group": "MIS"
    },
    {
      "id": 280,
      "label": "Schottky-Mott Rule",
      "group": "MIS"
    },
    {
      "id": 281,
      "label": "Metal-Semiconductor Junction",
      "group": "MIS"
    },
    {
      "id": 282,
      "label": "Schottky Barrier",
      "group": "MIS"
    },
    {
      "id": 283,
      "label": "Schottky Barrier Height",
      "group": "MIS"
    },
    {
      "id": 284,
      "label": "Thermionic Emission",
      "group": "MIS"
    },
    {
      "id": 285,
      "label": "Thermionic Emission Current",
      "group": "MIS"
    },
    {
      "id": 286,
      "label": "Image Force Lowering",
      "group": "MIS"
    },
    {
      "id": 287,
      "label": "Barrier Lowering",
      "group": "MIS"
    },
    {
      "id": 288,
      "label": "Ohmic Contact",
      "group": "MIS"
    },
    {
      "id": 289,
      "label": "Tunneling Ohmic Contact",
      "group": "MIS"
    },
    {
      "id": 290,
      "label": "Specific Contact Resistance",
      "group": "MIS"
    },
    {
      "id": 291,
      "label": "Transfer Length Method",
      "group": "MIS"
    },
    {
      "id": 292,
      "label": "Fermi Level Pinning",
      "group": "MIS"
    },
    {
      "id": 293,
      "label": "Metal-Induced Gap States",
      "group": "MIS"
    },
    {
      "id": 294,
      "label": "Interface Trap Density",
      "group": "MIS"
    },
    {
      "id": 295,
      "label": "MOS Capacitor",
      "group": "MIS"
    },
    {
      "id": 296,
      "label": "MOS Structure",
      "group": "MIS"
    },
    {
      "id": 297,
      "label": "Metal-Oxide-Semiconductor",
      "group": "MIS"
    },
    {
      "id": 298,
      "label": "Gate Oxide",
      "group": "MIS"
    },
    {
      "id": 299,
      "label": "Silicon Dioxide Properties",
      "group": "MIS"
    },
    {
      "id": 300,
      "label": "High-K Dielectrics",
      "group": "MIS"
    },
    {
      "id": 301,
      "label": "Accumulation Region MOS",
      "group": "MIS"
    },
    {
      "id": 302,
      "label": "Depletion Region MOS",
      "group": "MIS"
    },
    {
      "id": 303,
      "label": "Inversion Region MOS",
      "group": "MIS"
    },
    {
      "id": 304,
      "label": "Strong Inversion",
      "group": "MIS"
    },
    {
      "id": 305,
      "label": "Weak Inversion",
      "group": "MIS"
    },
    {
      "id": 306,
      "label": "Flat-Band Condition",
      "group": "MIS"
    },
    {
      "id": 307,
      "label": "Flat-Band Voltage",
      "group": "MIS"
    },
    {
      "id": 308,
      "label": "Threshold Voltage",
      "group": "MIS"
    },
    {
      "id": 309,
      "label": "Body Effect",
      "group": "MIS"
    },
    {
      "id": 310,
      "label": "Oxide Charge",
      "group": "MIS"
    },
    {
      "id": 311,
      "label": "Fixed Oxide Charge",
      "group": "MIS"
    },
    {
      "id": 312,
      "label": "Interface Trapped Charge",
      "group": "MIS"
    },
    {
      "id": 313,
      "label": "Mobile Ionic Charge",
      "group": "MIS"
    },
    {
      "id": 314,
      "label": "Oxide Trapped Charge",
      "group": "MIS"
    },
    {
      "id": 315,
      "label": "C-V Characteristic MOS",
      "group": "MIS"
    },
    {
      "id": 316,
      "label": "High-Frequency C-V",
      "group": "MIS"
    },
    {
      "id": 317,
      "label": "Low-Frequency C-V",
      "group": "MIS"
    },
    {
      "id": 318,
      "label": "Deep Depletion",
      "group": "MIS"
    },
    {
      "id": 319,
      "label": "Gate Oxide Breakdown",
      "group": "MIS"
    },
    {
      "id": 320,
      "label": "Oxide Reliability",
      "group": "MIS"
    },
    {
      "id": 321,
      "label": "Time-Dependent Dielectric Breakdown",
      "group": "MIS"
    },
    {
      "id": 322,
      "label": "Hot Carrier Oxide Degradation",
      "group": "MIS"
    },
    {
      "id": 323,
      "label": "Bipolar Junction Transistor",
      "group": "BJT"
    },
    {
      "id": 324,
      "label": "NPN Transistor",
      "group": "BJT"
    },
    {
      "id": 325,
      "label": "PNP Transistor",
      "group": "BJT"
    },
    {
      "id": 326,
      "label": "BJT Regions of Operation",
      "group": "BJT"
    },
    {
      "id": 327,
      "label": "Active Region BJT",
      "group": "BJT"
    },
    {
      "id": 328,
      "label": "Saturation Region BJT",
      "group": "BJT"
    },
    {
      "id": 329,
      "label": "Cutoff Region BJT",
      "group": "BJT"
    },
    {
      "id": 330,
      "label": "Common-Emitter Configuration",
      "group": "BJT"
    },
    {
      "id": 331,
      "label": "Common-Base Configuration",
      "group": "BJT"
    },
    {
      "id": 332,
      "label": "Common-Collector Configuration",
      "group": "BJT"
    },
    {
      "id": 333,
      "label": "Emitter Injection Efficiency",
      "group": "BJT"
    },
    {
      "id": 334,
      "label": "Base Transport Factor",
      "group": "BJT"
    },
    {
      "id": 335,
      "label": "Current Gain Beta",
      "group": "BJT"
    },
    {
      "id": 336,
      "label": "Current Gain Alpha",
      "group": "BJT"
    },
    {
      "id": 337,
      "label": "Collector Current",
      "group": "BJT"
    },
    {
      "id": 338,
      "label": "Base Current",
      "group": "BJT"
    },
    {
      "id": 339,
      "label": "Emitter Current",
      "group": "BJT"
    },
    {
      "id": 340,
      "label": "Ebers-Moll Model",
      "group": "BJT"
    },
    {
      "id": 341,
      "label": "Gummel-Poon Model",
      "group": "BJT"
    },
    {
      "id": 342,
      "label": "Early Effect",
      "group": "BJT"
    },
    {
      "id": 343,
      "label": "Base-Width Modulation",
      "group": "BJT"
    },
    {
      "id": 344,
      "label": "Early Voltage",
      "group": "BJT"
    },
    {
      "id": 345,
      "label": "Kirk Effect",
      "group": "BJT"
    },
    {
      "id": 346,
      "label": "High-Current Effects BJT",
      "group": "BJT"
    },
    {
      "id": 347,
      "label": "Base Resistance",
      "group": "BJT"
    },
    {
      "id": 348,
      "label": "Collector Resistance",
      "group": "BJT"
    },
    {
      "id": 349,
      "label": "Emitter Resistance",
      "group": "BJT"
    },
    {
      "id": 350,
      "label": "Transition Frequency ft",
      "group": "BJT"
    },
    {
      "id": 351,
      "label": "Maximum Oscillation Frequency fmax",
      "group": "BJT"
    },
    {
      "id": 352,
      "label": "Heterojunction Bipolar Transistor",
      "group": "BJT"
    },
    {
      "id": 353,
      "label": "HBT Band Diagram",
      "group": "BJT"
    },
    {
      "id": 354,
      "label": "Emitter-Base Heterojunction",
      "group": "BJT"
    },
    {
      "id": 355,
      "label": "JFET Structure",
      "group": "FET"
    },
    {
      "id": 356,
      "label": "JFET Operation",
      "group": "FET"
    },
    {
      "id": 357,
      "label": "JFET Pinch-Off",
      "group": "FET"
    },
    {
      "id": 358,
      "label": "JFET I-V Characteristics",
      "group": "FET"
    },
    {
      "id": 359,
      "label": "MESFET Structure",
      "group": "FET"
    },
    {
      "id": 360,
      "label": "MESFET Operation",
      "group": "FET"
    },
    {
      "id": 361,
      "label": "MOSFET Structure",
      "group": "FET"
    },
    {
      "id": 362,
      "label": "MOSFET Gate",
      "group": "FET"
    },
    {
      "id": 363,
      "label": "MOSFET Source",
      "group": "FET"
    },
    {
      "id": 364,
      "label": "MOSFET Drain",
      "group": "FET"
    },
    {
      "id": 365,
      "label": "MOSFET Substrate",
      "group": "FET"
    },
    {
      "id": 366,
      "label": "N-Channel MOSFET",
      "group": "FET"
    },
    {
      "id": 367,
      "label": "P-Channel MOSFET",
      "group": "FET"
    },
    {
      "id": 368,
      "label": "Enhancement Mode MOSFET",
      "group": "FET"
    },
    {
      "id": 369,
      "label": "Depletion Mode MOSFET",
      "group": "FET"
    },
    {
      "id": 370,
      "label": "Triode Region MOSFET",
      "group": "FET"
    },
    {
      "id": 371,
      "label": "Linear Region MOSFET",
      "group": "FET"
    },
    {
      "id": 372,
      "label": "Saturation Region MOSFET",
      "group": "FET"
    },
    {
      "id": 373,
      "label": "Cutoff Region MOSFET",
      "group": "FET"
    },
    {
      "id": 374,
      "label": "MOSFET Threshold Voltage",
      "group": "FET"
    },
    {
      "id": 375,
      "label": "MOSFET I-V Long Channel",
      "group": "FET"
    },
    {
      "id": 376,
      "label": "MOSFET Transconductance",
      "group": "FET"
    },
    {
      "id": 377,
      "label": "MOSFET Output Conductance",
      "group": "FET"
    },
    {
      "id": 378,
      "label": "Subthreshold Conduction",
      "group": "FET"
    },
    {
      "id": 379,
      "label": "Subthreshold Slope",
      "group": "FET"
    },
    {
      "id": 380,
      "label": "Subthreshold Swing",
      "group": "FET"
    },
    {
      "id": 381,
      "label": "Channel Charge",
      "group": "FET"
    },
    {
      "id": 382,
      "label": "Inversion Charge Density",
      "group": "FET"
    },
    {
      "id": 383,
      "label": "Gradual Channel Approximation",
      "group": "FET"
    },
    {
      "id": 384,
      "label": "Channel-Length Modulation",
      "group": "FET"
    },
    {
      "id": 385,
      "label": "Pinch-Off Point",
      "group": "FET"
    },
    {
      "id": 386,
      "label": "Short-Channel Effects",
      "group": "FET"
    },
    {
      "id": 387,
      "label": "DIBL Effect",
      "group": "FET"
    },
    {
      "id": 388,
      "label": "Drain-Induced Barrier Lowering",
      "group": "FET"
    },
    {
      "id": 389,
      "label": "Punch-Through",
      "group": "FET"
    },
    {
      "id": 390,
      "label": "Velocity Saturation MOSFET",
      "group": "FET"
    },
    {
      "id": 391,
      "label": "Carrier Heating MOSFET",
      "group": "FET"
    },
    {
      "id": 392,
      "label": "Hot Carrier Injection",
      "group": "FET"
    },
    {
      "id": 393,
      "label": "Oxide Interface Degradation",
      "group": "FET"
    },
    {
      "id": 394,
      "label": "CMOS Technology",
      "group": "FET"
    },
    {
      "id": 395,
      "label": "CMOS Inverter",
      "group": "FET"
    },
    {
      "id": 396,
      "label": "NMOS Pull-Down",
      "group": "FET"
    },
    {
      "id": 397,
      "label": "PMOS Pull-Up",
      "group": "FET"
    },
    {
      "id": 398,
      "label": "Complementary Operation",
      "group": "FET"
    },
    {
      "id": 399,
      "label": "Static Power CMOS",
      "group": "FET"
    },
    {
      "id": 400,
      "label": "Dynamic Power CMOS",
      "group": "FET"
    },
    {
      "id": 401,
      "label": "FinFET Structure",
      "group": "FET"
    },
    {
      "id": 402,
      "label": "FinFET Operation",
      "group": "FET"
    },
    {
      "id": 403,
      "label": "Gate-All-Around Transistor",
      "group": "FET"
    },
    {
      "id": 404,
      "label": "SOI MOSFET",
      "group": "FET"
    },
    {
      "id": 405,
      "label": "Fully Depleted SOI",
      "group": "FET"
    },
    {
      "id": 406,
      "label": "Partially Depleted SOI",
      "group": "FET"
    },
    {
      "id": 407,
      "label": "Multi-Gate Transistor",
      "group": "FET"
    },
    {
      "id": 408,
      "label": "Nanowire Transistor",
      "group": "FET"
    },
    {
      "id": 409,
      "label": "Scaling Laws MOSFET",
      "group": "FET"
    },
    {
      "id": 410,
      "label": "Dennard Scaling",
      "group": "FET"
    },
    {
      "id": 411,
      "label": "International Roadmap Devices",
      "group": "FET"
    },
    {
      "id": 412,
      "label": "Light-Emitting Diode",
      "group": "OPT"
    },
    {
      "id": 413,
      "label": "LED Operation Principle",
      "group": "OPT"
    },
    {
      "id": 414,
      "label": "LED Materials",
      "group": "OPT"
    },
    {
      "id": 415,
      "label": "Direct Bandgap LED Requirement",
      "group": "OPT"
    },
    {
      "id": 416,
      "label": "LED Efficiency",
      "group": "OPT"
    },
    {
      "id": 417,
      "label": "Internal Quantum Efficiency",
      "group": "OPT"
    },
    {
      "id": 418,
      "label": "External Quantum Efficiency",
      "group": "OPT"
    },
    {
      "id": 419,
      "label": "Light Extraction Efficiency",
      "group": "OPT"
    },
    {
      "id": 420,
      "label": "LED Wavelength Selection",
      "group": "OPT"
    },
    {
      "id": 421,
      "label": "White LED Technology",
      "group": "OPT"
    },
    {
      "id": 422,
      "label": "Phosphor Conversion LED",
      "group": "OPT"
    },
    {
      "id": 423,
      "label": "Laser Diode",
      "group": "OPT"
    },
    {
      "id": 424,
      "label": "Laser Operation Principle",
      "group": "OPT"
    },
    {
      "id": 425,
      "label": "Population Inversion",
      "group": "OPT"
    },
    {
      "id": 426,
      "label": "Optical Gain",
      "group": "OPT"
    },
    {
      "id": 427,
      "label": "Threshold Current Density",
      "group": "OPT"
    },
    {
      "id": 428,
      "label": "Laser Cavity",
      "group": "OPT"
    },
    {
      "id": 429,
      "label": "Fabry-Perot Cavity",
      "group": "OPT"
    },
    {
      "id": 430,
      "label": "Distributed Bragg Reflector",
      "group": "OPT"
    },
    {
      "id": 431,
      "label": "Distributed Feedback Laser",
      "group": "OPT"
    },
    {
      "id": 432,
      "label": "Vertical Cavity Surface Emitting Laser",
      "group": "OPT"
    },
    {
      "id": 433,
      "label": "VCSEL Structure",
      "group": "OPT"
    },
    {
      "id": 434,
      "label": "Double Heterostructure Laser",
      "group": "OPT"
    },
    {
      "id": 435,
      "label": "Quantum Well Laser",
      "group": "OPT"
    },
    {
      "id": 436,
      "label": "Semiconductor Optical Amplifier",
      "group": "OPT"
    },
    {
      "id": 437,
      "label": "Photodiode Structure",
      "group": "OPT"
    },
    {
      "id": 438,
      "label": "PIN Photodiode",
      "group": "OPT"
    },
    {
      "id": 439,
      "label": "Photodiode Responsivity",
      "group": "OPT"
    },
    {
      "id": 440,
      "label": "Quantum Efficiency Photodiode",
      "group": "OPT"
    },
    {
      "id": 441,
      "label": "Photodiode Dark Current",
      "group": "OPT"
    },
    {
      "id": 442,
      "label": "Photodiode Bandwidth",
      "group": "OPT"
    },
    {
      "id": 443,
      "label": "Avalanche Photodiode",
      "group": "OPT"
    },
    {
      "id": 444,
      "label": "APD Gain",
      "group": "OPT"
    },
    {
      "id": 445,
      "label": "APD Noise",
      "group": "OPT"
    },
    {
      "id": 446,
      "label": "Solar Cell Operation",
      "group": "OPT"
    },
    {
      "id": 447,
      "label": "Photovoltaic Effect",
      "group": "OPT"
    },
    {
      "id": 448,
      "label": "Solar Cell I-V Curve",
      "group": "OPT"
    },
    {
      "id": 449,
      "label": "Short-Circuit Current",
      "group": "OPT"
    },
    {
      "id": 450,
      "label": "Open-Circuit Voltage",
      "group": "OPT"
    },
    {
      "id": 451,
      "label": "Fill Factor Solar Cell",
      "group": "OPT"
    },
    {
      "id": 452,
      "label": "Power Conversion Efficiency",
      "group": "OPT"
    },
    {
      "id": 453,
      "label": "Shockley-Queisser Limit",
      "group": "OPT"
    },
    {
      "id": 454,
      "label": "Single-Junction Solar Cell",
      "group": "OPT"
    },
    {
      "id": 455,
      "label": "Multi-Junction Solar Cell",
      "group": "OPT"
    },
    {
      "id": 456,
      "label": "Tandem Solar Cell",
      "group": "OPT"
    },
    {
      "id": 457,
      "label": "Solar Cell Losses",
      "group": "OPT"
    },
    {
      "id": 458,
      "label": "Recombination Losses Solar Cell",
      "group": "OPT"
    },
    {
      "id": 459,
      "label": "Thermalization Losses",
      "group": "OPT"
    },
    {
      "id": 460,
      "label": "Charge-Coupled Device",
      "group": "OPT"
    },
    {
      "id": 461,
      "label": "CCD Operation",
      "group": "OPT"
    },
    {
      "id": 462,
      "label": "CMOS Image Sensor",
      "group": "OPT"
    },
    {
      "id": 463,
      "label": "Pixel Architecture",
      "group": "OPT"
    },
    {
      "id": 464,
      "label": "Read Noise",
      "group": "OPT"
    },
    {
      "id": 465,
      "label": "III-V Semiconductor Compounds",
      "group": "ADV"
    },
    {
      "id": 466,
      "label": "GaAs Properties",
      "group": "ADV"
    },
    {
      "id": 467,
      "label": "InP Properties",
      "group": "ADV"
    },
    {
      "id": 468,
      "label": "InGaAs Properties",
      "group": "ADV"
    },
    {
      "id": 469,
      "label": "AlGaAs Properties",
      "group": "ADV"
    },
    {
      "id": 470,
      "label": "InGaAsP Properties",
      "group": "ADV"
    },
    {
      "id": 471,
      "label": "II-VI Semiconductor Compounds",
      "group": "ADV"
    },
    {
      "id": 472,
      "label": "Wide-Bandgap Semiconductors",
      "group": "ADV"
    },
    {
      "id": 473,
      "label": "GaN Material Properties",
      "group": "ADV"
    },
    {
      "id": 474,
      "label": "GaN Crystal Growth",
      "group": "ADV"
    },
    {
      "id": 475,
      "label": "AlGaN Alloy",
      "group": "ADV"
    },
    {
      "id": 476,
      "label": "AlGaN/GaN Heterostructure",
      "group": "ADV"
    },
    {
      "id": 477,
      "label": "SiC Polytypes",
      "group": "ADV"
    },
    {
      "id": 478,
      "label": "SiC Properties",
      "group": "ADV"
    },
    {
      "id": 479,
      "label": "Quantum Well Structure",
      "group": "ADV"
    },
    {
      "id": 480,
      "label": "Quantum Well Energy Levels",
      "group": "ADV"
    },
    {
      "id": 481,
      "label": "Quantum Well Wave Functions",
      "group": "ADV"
    },
    {
      "id": 482,
      "label": "Subband Structure",
      "group": "ADV"
    },
    {
      "id": 483,
      "label": "Quantum Wire",
      "group": "ADV"
    },
    {
      "id": 484,
      "label": "Quantum Dot",
      "group": "ADV"
    },
    {
      "id": 485,
      "label": "Quantum Dot Energy Levels",
      "group": "ADV"
    },
    {
      "id": 486,
      "label": "Size Quantization",
      "group": "ADV"
    },
    {
      "id": 487,
      "label": "Confinement Energy",
      "group": "ADV"
    },
    {
      "id": 488,
      "label": "2D Electron Gas",
      "group": "ADV"
    },
    {
      "id": 489,
      "label": "2DEG Formation",
      "group": "ADV"
    },
    {
      "id": 490,
      "label": "High Electron Mobility Transistor",
      "group": "ADV"
    },
    {
      "id": 491,
      "label": "HEMT Structure",
      "group": "ADV"
    },
    {
      "id": 492,
      "label": "HEMT Operation",
      "group": "ADV"
    },
    {
      "id": 493,
      "label": "Pseudomorphic HEMT",
      "group": "ADV"
    },
    {
      "id": 494,
      "label": "Metamorphic HEMT",
      "group": "ADV"
    },
    {
      "id": 495,
      "label": "Strained Silicon",
      "group": "ADV"
    },
    {
      "id": 496,
      "label": "Strain Effects on Band Structure",
      "group": "ADV"
    },
    {
      "id": 497,
      "label": "Biaxial Strain",
      "group": "ADV"
    },
    {
      "id": 498,
      "label": "Uniaxial Strain",
      "group": "ADV"
    },
    {
      "id": 499,
      "label": "Critical Thickness",
      "group": "ADV"
    },
    {
      "id": 500,
      "label": "Pseudomorphic Layers",
      "group": "ADV"
    },
    {
      "id": 501,
      "label": "Graphene Properties",
      "group": "ADV"
    },
    {
      "id": 502,
      "label": "Graphene Band Structure",
      "group": "ADV"
    },
    {
      "id": 503,
      "label": "Graphene Dirac Points",
      "group": "ADV"
    },
    {
      "id": 504,
      "label": "Graphene Mobility",
      "group": "ADV"
    },
    {
      "id": 505,
      "label": "Transition Metal Dichalcogenides",
      "group": "ADV"
    },
    {
      "id": 506,
      "label": "Molybdenum Disulfide MoS2",
      "group": "ADV"
    },
    {
      "id": 507,
      "label": "TMD Band Structure",
      "group": "ADV"
    },
    {
      "id": 508,
      "label": "2D Materials Overview",
      "group": "ADV"
    },
    {
      "id": 509,
      "label": "Van der Waals Heterostructures",
      "group": "ADV"
    },
    {
      "id": 510,
      "label": "Carbon Nanotube Properties",
      "group": "ADV"
    },
    {
      "id": 511,
      "label": "Carbon Nanotube Band Structure",
      "group": "ADV"
    },
    {
      "id": 512,
      "label": "Power Diode Structure",
      "group": "PWR"
    },
    {
      "id": 513,
      "label": "Power Diode Ratings",
      "group": "PWR"
    },
    {
      "id": 514,
      "label": "Thyristor Structure",
      "group": "PWR"
    },
    {
      "id": 515,
      "label": "Thyristor Operation",
      "group": "PWR"
    },
    {
      "id": 516,
      "label": "Silicon-Controlled Rectifier",
      "group": "PWR"
    },
    {
      "id": 517,
      "label": "IGBT Structure",
      "group": "PWR"
    },
    {
      "id": 518,
      "label": "IGBT Operation",
      "group": "PWR"
    },
    {
      "id": 519,
      "label": "Power MOSFET",
      "group": "PWR"
    },
    {
      "id": 520,
      "label": "Superjunction MOSFET",
      "group": "PWR"
    },
    {
      "id": 521,
      "label": "High-Voltage Device Design",
      "group": "PWR"
    },
    {
      "id": 522,
      "label": "Breakdown Engineering",
      "group": "PWR"
    },
    {
      "id": 523,
      "label": "Punch-Through Voltage",
      "group": "PWR"
    },
    {
      "id": 524,
      "label": "Gunn Diode",
      "group": "PWR"
    },
    {
      "id": 525,
      "label": "Gunn Effect",
      "group": "PWR"
    },
    {
      "id": 526,
      "label": "Transferred Electron Effect",
      "group": "PWR"
    },
    {
      "id": 527,
      "label": "IMPATT Diode",
      "group": "PWR"
    },
    {
      "id": 528,
      "label": "Negative Resistance Devices",
      "group": "PWR"
    },
    {
      "id": 529,
      "label": "Microwave Device Parasitics",
      "group": "PWR"
    },
    {
      "id": 530,
      "label": "Cutoff Frequency High-Frequency",
      "group": "PWR"
    },
    {
      "id": 531,
      "label": "Czochralski Crystal Growth",
      "group": "FAB"
    },
    {
      "id": 532,
      "label": "Float-Zone Crystal Growth",
      "group": "FAB"
    },
    {
      "id": 533,
      "label": "Crystal Ingot Processing",
      "group": "FAB"
    },
    {
      "id": 534,
      "label": "Wafer Preparation",
      "group": "FAB"
    },
    {
      "id": 535,
      "label": "Epitaxial Growth",
      "group": "FAB"
    },
    {
      "id": 536,
      "label": "Molecular Beam Epitaxy",
      "group": "FAB"
    },
    {
      "id": 537,
      "label": "Metal-Organic CVD",
      "group": "FAB"
    },
    {
      "id": 538,
      "label": "Chemical Vapor Deposition",
      "group": "FAB"
    },
    {
      "id": 539,
      "label": "Thermal Oxidation of Silicon",
      "group": "FAB"
    },
    {
      "id": 540,
      "label": "Deal-Grove Model",
      "group": "FAB"
    },
    {
      "id": 541,
      "label": "Dry Oxidation",
      "group": "FAB"
    },
    {
      "id": 542,
      "label": "Wet Oxidation",
      "group": "FAB"
    },
    {
      "id": 543,
      "label": "Diffusion in Solids",
      "group": "FAB"
    },
    {
      "id": 544,
      "label": "Fick First Law",
      "group": "FAB"
    },
    {
      "id": 545,
      "label": "Fick Second Law",
      "group": "FAB"
    },
    {
      "id": 546,
      "label": "Diffusion Coefficient Thermal",
      "group": "FAB"
    },
    {
      "id": 547,
      "label": "Ion Implantation",
      "group": "FAB"
    },
    {
      "id": 548,
      "label": "Ion Range Distribution",
      "group": "FAB"
    },
    {
      "id": 549,
      "label": "Channeling Effect",
      "group": "FAB"
    },
    {
      "id": 550,
      "label": "Annealing Post-Implant",
      "group": "FAB"
    },
    {
      "id": 551,
      "label": "Photolithography Process",
      "group": "FAB"
    },
    {
      "id": 552,
      "label": "Photoresist",
      "group": "FAB"
    },
    {
      "id": 553,
      "label": "Exposure and Development",
      "group": "FAB"
    },
    {
      "id": 554,
      "label": "Mask Alignment",
      "group": "FAB"
    },
    {
      "id": 555,
      "label": "Etching Processes",
      "group": "FAB"
    },
    {
      "id": 556,
      "label": "Wet Chemical Etching",
      "group": "FAB"
    },
    {
      "id": 557,
      "label": "Dry Etching RIE",
      "group": "FAB"
    },
    {
      "id": 558,
      "label": "Plasma Etching",
      "group": "FAB"
    },
    {
      "id": 559,
      "label": "Thin Film Deposition",
      "group": "FAB"
    },
    {
      "id": 560,
      "label": "Physical Vapor Deposition",
      "group": "FAB"
    },
    {
      "id": 561,
      "label": "Sputtering",
      "group": "FAB"
    },
    {
      "id": 562,
      "label": "Metallization",
      "group": "FAB"
    },
    {
      "id": 563,
      "label": "Aluminum Interconnects",
      "group": "FAB"
    },
    {
      "id": 564,
      "label": "Copper Interconnects",
      "group": "FAB"
    },
    {
      "id": 565,
      "label": "Silicide Formation",
      "group": "FAB"
    },
    {
      "id": 566,
      "label": "Contact Resistance Fabrication",
      "group": "FAB"
    },
    {
      "id": 567,
      "label": "Process-Induced Defects",
      "group": "FAB"
    },
    {
      "id": 568,
      "label": "Contamination Control",
      "group": "FAB"
    },
    {
      "id": 569,
      "label": "Yield Engineering Overview",
      "group": "FAB"
    },
    {
      "id": 570,
      "label": "Device Characterization Methods",
      "group": "CHAR"
    },
    {
      "id": 571,
      "label": "I-V Measurement",
      "group": "CHAR"
    },
    {
      "id": 572,
      "label": "C-V Measurement",
      "group": "CHAR"
    },
    {
      "id": 573,
      "label": "Hall Measurement",
      "group": "CHAR"
    },
    {
      "id": 574,
      "label": "Four-Point Probe",
      "group": "CHAR"
    },
    {
      "id": 575,
      "label": "DLTS Technique",
      "group": "CHAR"
    },
    {
      "id": 576,
      "label": "Optical Characterization",
      "group": "CHAR"
    },
    {
      "id": 577,
      "label": "Photoluminescence Spectroscopy",
      "group": "CHAR"
    },
    {
      "id": 578,
      "label": "Electroluminescence",
      "group": "CHAR"
    },
    {
      "id": 579,
      "label": "Raman Spectroscopy",
      "group": "CHAR"
    },
    {
      "id": 580,
      "label": "Transmission Electron Microscopy",
      "group": "CHAR"
    },
    {
      "id": 581,
      "label": "Scanning Electron Microscopy",
      "group": "CHAR"
    },
    {
      "id": 582,
      "label": "Secondary Ion Mass Spectrometry",
      "group": "CHAR"
    },
    {
      "id": 583,
      "label": "Auger Electron Spectroscopy",
      "group": "CHAR"
    },
    {
      "id": 584,
      "label": "SPICE Compact Models",
      "group": "CHAR"
    },
    {
      "id": 585,
      "label": "Level-1 MOSFET Model",
      "group": "CHAR"
    },
    {
      "id": 586,
      "label": "BSIM Model",
      "group": "CHAR"
    },
    {
      "id": 587,
      "label": "Small-Signal Equivalent Circuit",
      "group": "CHAR"
    },
    {
      "id": 588,
      "label": "Large-Signal Device Model",
      "group": "CHAR"
    },
    {
      "id": 589,
      "label": "Noise in Semiconductor Devices",
      "group": "CHAR"
    },
    {
      "id": 590,
      "label": "Thermal Noise",
      "group": "CHAR"
    },
    {
      "id": 591,
      "label": "Shot Noise",
      "group": "CHAR"
    },
    {
      "id": 592,
      "label": "Flicker Noise",
      "group": "CHAR"
    },
    {
      "id": 593,
      "label": "Noise Figure",
      "group": "CHAR"
    },
    {
      "id": 594,
      "label": "Band-to-Band Tunneling",
      "group": "CHAR"
    },
    {
      "id": 595,
      "label": "Esaki Tunnel Diode",
      "group": "CHAR"
    },
    {
      "id": 596,
      "label": "Resonant Tunneling Diode",
      "group": "CHAR"
    },
    {
      "id": 597,
      "label": "Double Barrier Structure",
      "group": "CHAR"
    },
    {
      "id": 598,
      "label": "Negative Differential Resistance",
      "group": "CHAR"
    },
    {
      "id": 599,
      "label": "Ballistic Transport",
      "group": "CHAR"
    },
    {
      "id": 600,
      "label": "Quantum Confinement Effects",
      "group": "ADV"
    }
  ],
  "edges": [
    {
      "from": 2,
      "to": 1
    },
    {
      "from": 2,
      "to": 11
    },
    {
      "from": 3,
      "to": 1
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}