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Chapters

This textbook is organized into 22 chapters covering all 600 concepts in the learning graph.

Chapter Overview

  1. Introduction to Semiconductors and Bandgap Fundamentals — Establishes the materials landscape and the energy band diagram as the central conceptual tool.
  2. Crystal Lattice Structure and Symmetry — Covers real-space crystal structures, reciprocal lattice, Brillouin zones, and diffraction.
  3. Crystal Bonding, Defects, and Surfaces — Examines bonding mechanisms and the full hierarchy of crystal defects.
  4. Quantum Mechanics: Wave Equations and Atomic Structure — Reviews the Schrödinger equation, potential wells, tunneling, and atomic orbitals.
  5. Bloch's Theorem, Band Formation, and E-k Diagrams — Develops band theory from the Kronig-Penney model through effective mass and density of states.
  6. Fermi-Dirac Statistics and Intrinsic Carrier Concentrations — Derives carrier statistics, intrinsic concentration, and the law of mass action.
  7. Doping, Extrinsic Carriers, and the Fermi Level — Covers donor/acceptor doping, ionization regimes, and Fermi-level dependence on temperature and doping.
  8. Carrier Drift, Mobility, and Scattering Mechanisms — Analyzes drift transport, low- and high-field mobility, and all major scattering mechanisms.
  9. Carrier Diffusion, Transport Theory, and Electrical Measurements — Develops diffusion, the Einstein relation, drift-diffusion model, and Hall effect measurements.
  10. Generation, Recombination, Continuity, and Optical Processes — Covers SRH, Auger, and radiative recombination, optical absorption, quasi-Fermi levels, and the continuity equation.
  11. P-N Junction: Equilibrium, Bias, and the Ideal Diode — Derives the depletion approximation, built-in potential, and the Shockley diode equation.
  12. P-N Junction: Dynamics, Breakdown, and Heterojunctions — Covers breakdown mechanisms, junction capacitance, switching dynamics, and heterojunction band alignment.
  13. Metal-Semiconductor Contacts and MOS Physics — Analyzes Schottky barriers, ohmic contacts, MOS capacitor regions, threshold voltage, and oxide reliability.
  14. Bipolar Junction Transistors — Covers BJT operation, current gain, the Ebers-Moll model, Early effect, and high-frequency limits.
  15. JFET, MESFET, and Long-Channel MOSFET Fundamentals — Introduces FET families and develops the long-channel MOSFET I-V model through subthreshold behavior.
  16. Short-Channel Effects, CMOS, and Advanced FET Structures — Covers DIBL, punch-through, hot carriers, CMOS, and modern FET architectures (FinFET, GAA, SOI).
  17. Optoelectronic Sources: LEDs and Laser Diodes — Examines LED efficiency metrics, laser diode operation, and optical cavity structures.
  18. Photodetectors, Solar Cells, and Imaging Devices — Covers PIN and avalanche photodiodes, solar cell physics, and imaging sensors.
  19. III-V/II-VI Semiconductors, Quantum Nanostructures, and HEMTs — Covers compound semiconductors, quantum wells/wires/dots, 2DEG formation, and HEMT devices.
  20. Strained Silicon, 2D Materials, and Power/Microwave Devices — Covers strained silicon, graphene, TMDs, carbon nanotubes, and power/microwave device families.
  21. Semiconductor Fabrication Technology — Covers crystal growth, epitaxy, oxidation, diffusion, ion implantation, lithography, etching, and metallization.
  22. Device Characterization and Compact Modeling — Covers electrical and optical characterization techniques, compact models, noise, and tunneling devices.

How to Use This Textbook

Chapters are ordered to respect concept dependencies: each chapter assumes mastery of all concepts in preceding chapters. Chapters 1–10 build the quantum mechanical and statistical foundations; Chapters 11–18 cover the major device families; Chapters 19–22 address advanced materials, fabrication, and measurement. Students new to quantum mechanics should read Chapters 4–5 carefully before proceeding to device chapters.

Note: Each chapter index lists the exact concepts from the learning graph covered in that chapter. Complete prerequisites before advancing to later chapters.