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Semiconductor Physics: Concept List

600 concepts for the Semiconductor Physics: Fundamentals to Advanced Applications course.

  1. Semiconductor Definition
  2. Conductor vs Insulator vs Semiconductor
  3. Elemental Semiconductors
  4. Compound Semiconductors
  5. Silicon Material Properties
  6. Germanium Material Properties
  7. Gallium Arsenide Properties
  8. Indium Phosphide Properties
  9. Gallium Nitride Properties
  10. Silicon Carbide Properties
  11. Bandgap Energy
  12. Direct Bandgap
  13. Indirect Bandgap
  14. Energy Band Diagram
  15. Conduction Band
  16. Valence Band
  17. Forbidden Energy Gap
  18. Crystal Lattice
  19. Unit Cell
  20. Primitive Cell
  21. Basis Vectors
  22. Simple Cubic Structure
  23. Face-Centered Cubic Structure
  24. Body-Centered Cubic Structure
  25. Diamond Cubic Structure
  26. Zincblende Structure
  27. Wurtzite Structure
  28. Miller Indices
  29. Crystal Planes
  30. Crystal Directions
  31. Reciprocal Lattice
  32. First Brillouin Zone
  33. Wigner-Seitz Cell
  34. Lattice Constant
  35. Lattice Mismatch
  36. Bragg Diffraction Law
  37. X-Ray Diffraction
  38. Electron Diffraction
  39. Covalent Bonding in Semiconductors
  40. Ionic Bonding
  41. Metallic Bonding
  42. Van der Waals Forces
  43. Hybridization SP3
  44. Point Defects
  45. Vacancies
  46. Interstitials
  47. Substitutional Impurities
  48. Frenkel Defects
  49. Schottky Defects
  50. Dislocations
  51. Edge Dislocations
  52. Screw Dislocations
  53. Stacking Faults
  54. Grain Boundaries
  55. Surface States
  56. Interface States
  57. Dangling Bonds
  58. Wave-Particle Duality
  59. de Broglie Wavelength
  60. Heisenberg Uncertainty Principle
  61. Schrodinger Equation
  62. Time-Dependent Schrodinger Equation
  63. Time-Independent Schrodinger Equation
  64. Wave Function
  65. Probability Density
  66. Quantum Normalization
  67. Particle in a Box
  68. Infinite Potential Well
  69. Finite Potential Well
  70. Quantum Tunneling
  71. Tunnel Probability
  72. WKB Approximation
  73. Hydrogen Atom Model
  74. Atomic Orbitals
  75. Quantum Numbers
  76. Principal Quantum Number
  77. Angular Momentum Quantum Number
  78. Magnetic Quantum Number
  79. Spin Quantum Number
  80. Pauli Exclusion Principle
  81. Electron Spin
  82. Spin-Orbit Coupling
  83. Perturbation Theory
  84. Variational Method
  85. Kronig-Penney Model
  86. Bloch Theorem
  87. Bloch Wave Functions
  88. Crystal Momentum
  89. Periodic Potential
  90. Band Gap Origin
  91. Free Electron Model
  92. Nearly-Free Electron Model
  93. Tight-Binding Model
  94. Linear Combination of Atomic Orbitals
  95. E-k Dispersion Relation
  96. Effective Mass Approximation
  97. Longitudinal Effective Mass
  98. Transverse Effective Mass
  99. Density-of-States Effective Mass
  100. Conductivity Effective Mass
  101. Hole Concept
  102. Hole Effective Mass
  103. Heavy Holes
  104. Light Holes
  105. Split-Off Band
  106. Spin-Orbit Splitting
  107. Fermi Energy
  108. Fermi Level
  109. Fermi-Dirac Distribution
  110. Maxwell-Boltzmann Distribution
  111. Bose-Einstein Distribution
  112. Density of States 3D
  113. Density of States 2D
  114. Density of States 1D
  115. Density of States 0D
  116. Effective Density of States
  117. Conduction Band Effective DOS
  118. Valence Band Effective DOS
  119. Intrinsic Carrier Concentration
  120. Intrinsic Fermi Level
  121. Temperature Dependence ni
  122. Law of Mass Action
  123. Electron Concentration Formula
  124. Hole Concentration Formula
  125. Charge Neutrality Condition
  126. N-Type Doping
  127. P-Type Doping
  128. Donor Atoms
  129. Acceptor Atoms
  130. Group V Dopants in Silicon
  131. Group III Dopants in Silicon
  132. Phosphorus as Donor
  133. Arsenic as Donor
  134. Antimony as Donor
  135. Boron as Acceptor
  136. Gallium as Acceptor
  137. Aluminum as Acceptor
  138. Indium as Acceptor
  139. Ionization Energy
  140. Complete Ionization
  141. Freeze-Out Regime
  142. Extrinsic Regime
  143. Intrinsic Regime Temperature
  144. Majority Carriers
  145. Minority Carriers
  146. Extrinsic Carrier Concentration
  147. Degenerate Semiconductor
  148. Non-Degenerate Semiconductor
  149. Compensation Doping
  150. Net Doping Concentration
  151. Fermi Level in N-Type
  152. Fermi Level in P-Type
  153. Temperature Dependence of Fermi Level
  154. Drift Current
  155. Drift Velocity
  156. Carrier Mobility
  157. Electron Mobility
  158. Hole Mobility
  159. Low-Field Mobility
  160. High-Field Mobility
  161. Velocity Saturation
  162. Saturation Velocity
  163. Hot Carriers
  164. Lattice Scattering
  165. Phonon Scattering
  166. Acoustic Phonon Scattering
  167. Optical Phonon Scattering
  168. Intervalley Scattering
  169. Ionized Impurity Scattering
  170. Neutral Impurity Scattering
  171. Surface Roughness Scattering
  172. Alloy Scattering
  173. Matthiessen Rule
  174. Mobility Temperature Dependence
  175. Mobility Doping Dependence
  176. Diffusion Current
  177. Diffusion Coefficient
  178. Einstein Relation
  179. Total Current Density
  180. Drift-Diffusion Model
  181. Resistivity
  182. Conductivity
  183. Sheet Resistance
  184. Hall Effect
  185. Hall Coefficient
  186. Hall Voltage
  187. Hall Mobility
  188. Van der Pauw Method
  189. Magnetoresistance
  190. Piezoelectric Effect
  191. Piezoresistance Effect
  192. Continuity Equation
  193. Ambipolar Transport
  194. Ambipolar Diffusion Coefficient
  195. Minority Carrier Lifetime
  196. Minority Carrier Diffusion Length
  197. Recombination Rate
  198. Generation Rate
  199. Direct Recombination
  200. Band-to-Band Recombination
  201. Radiative Recombination
  202. Radiative Recombination Coefficient
  203. Shockley-Read-Hall Recombination
  204. Trap-Assisted Recombination
  205. Trap Density
  206. Trap Energy Level
  207. Capture Cross Section
  208. Auger Recombination
  209. Auger Coefficient
  210. Surface Recombination
  211. Surface Recombination Velocity
  212. Optical Absorption
  213. Absorption Coefficient
  214. Optical Generation Rate
  215. Photoconductivity
  216. Quasi-Fermi Levels
  217. Quasi-Fermi Level Splitting
  218. Low-Level Injection
  219. High-Level Injection
  220. Injection Level
  221. Excess Carriers
  222. P-N Junction
  223. Junction Formation
  224. Depletion Region
  225. Depletion Approximation
  226. Built-In Potential
  227. Contact Potential
  228. Electric Field in Depletion Region
  229. Potential Distribution in Junction
  230. Charge Distribution in Junction
  231. Depletion Width
  232. One-Sided Abrupt Junction
  233. Linearly Graded Junction
  234. Forward Bias
  235. Reverse Bias
  236. Zero Bias Equilibrium
  237. Band Diagram Forward Bias
  238. Band Diagram Reverse Bias
  239. Minority Carrier Injection
  240. Ideal Diode Equation
  241. Shockley Equation
  242. Diode Saturation Current
  243. Diode Ideality Factor
  244. Generation-Recombination Current
  245. Diffusion Current in Diode
  246. Tunneling Current in Diode
  247. Ohmic Region Diode
  248. Forward Voltage Drop
  249. Reverse Saturation Current
  250. Reverse Breakdown
  251. Avalanche Breakdown
  252. Impact Ionization
  253. Ionization Coefficients
  254. Multiplication Factor
  255. Zener Breakdown
  256. Zener Effect
  257. Zener Voltage
  258. Junction Capacitance
  259. Depletion Capacitance
  260. Diffusion Capacitance
  261. Small-Signal Diode Model
  262. Diode Conductance
  263. Transient Response Diode
  264. Charge Storage in Diode
  265. Reverse Recovery Time
  266. Minority Carrier Storage
  267. Diode Switching Speed
  268. Heterojunction
  269. Band Alignment Types
  270. Type I Heterojunction
  271. Type II Heterojunction
  272. Type III Heterojunction
  273. Anderson Rule
  274. Band Discontinuity
  275. Conduction Band Offset
  276. Valence Band Offset
  277. Graded Heterojunction
  278. Work Function
  279. Electron Affinity
  280. Schottky-Mott Rule
  281. Metal-Semiconductor Junction
  282. Schottky Barrier
  283. Schottky Barrier Height
  284. Thermionic Emission
  285. Thermionic Emission Current
  286. Image Force Lowering
  287. Barrier Lowering
  288. Ohmic Contact
  289. Tunneling Ohmic Contact
  290. Specific Contact Resistance
  291. Transfer Length Method
  292. Fermi Level Pinning
  293. Metal-Induced Gap States
  294. Interface Trap Density
  295. MOS Capacitor
  296. MOS Structure
  297. Metal-Oxide-Semiconductor
  298. Gate Oxide
  299. Silicon Dioxide Properties
  300. High-K Dielectrics
  301. Accumulation Region MOS
  302. Depletion Region MOS
  303. Inversion Region MOS
  304. Strong Inversion
  305. Weak Inversion
  306. Flat-Band Condition
  307. Flat-Band Voltage
  308. Threshold Voltage
  309. Body Effect
  310. Oxide Charge
  311. Fixed Oxide Charge
  312. Interface Trapped Charge
  313. Mobile Ionic Charge
  314. Oxide Trapped Charge
  315. C-V Characteristic MOS
  316. High-Frequency C-V
  317. Low-Frequency C-V
  318. Deep Depletion
  319. Gate Oxide Breakdown
  320. Oxide Reliability
  321. Time-Dependent Dielectric Breakdown
  322. Hot Carrier Oxide Degradation
  323. Bipolar Junction Transistor
  324. NPN Transistor
  325. PNP Transistor
  326. BJT Regions of Operation
  327. Active Region BJT
  328. Saturation Region BJT
  329. Cutoff Region BJT
  330. Common-Emitter Configuration
  331. Common-Base Configuration
  332. Common-Collector Configuration
  333. Emitter Injection Efficiency
  334. Base Transport Factor
  335. Current Gain Beta
  336. Current Gain Alpha
  337. Collector Current
  338. Base Current
  339. Emitter Current
  340. Ebers-Moll Model
  341. Gummel-Poon Model
  342. Early Effect
  343. Base-Width Modulation
  344. Early Voltage
  345. Kirk Effect
  346. High-Current Effects BJT
  347. Base Resistance
  348. Collector Resistance
  349. Emitter Resistance
  350. Transition Frequency ft
  351. Maximum Oscillation Frequency fmax
  352. Heterojunction Bipolar Transistor
  353. HBT Band Diagram
  354. Emitter-Base Heterojunction
  355. JFET Structure
  356. JFET Operation
  357. JFET Pinch-Off
  358. JFET I-V Characteristics
  359. MESFET Structure
  360. MESFET Operation
  361. MOSFET Structure
  362. MOSFET Gate
  363. MOSFET Source
  364. MOSFET Drain
  365. MOSFET Substrate
  366. N-Channel MOSFET
  367. P-Channel MOSFET
  368. Enhancement Mode MOSFET
  369. Depletion Mode MOSFET
  370. Triode Region MOSFET
  371. Linear Region MOSFET
  372. Saturation Region MOSFET
  373. Cutoff Region MOSFET
  374. MOSFET Threshold Voltage
  375. MOSFET I-V Long Channel
  376. MOSFET Transconductance
  377. MOSFET Output Conductance
  378. Subthreshold Conduction
  379. Subthreshold Slope
  380. Subthreshold Swing
  381. Channel Charge
  382. Inversion Charge Density
  383. Gradual Channel Approximation
  384. Channel-Length Modulation
  385. Pinch-Off Point
  386. Short-Channel Effects
  387. DIBL Effect
  388. Drain-Induced Barrier Lowering
  389. Punch-Through
  390. Velocity Saturation MOSFET
  391. Carrier Heating MOSFET
  392. Hot Carrier Injection
  393. Oxide Interface Degradation
  394. CMOS Technology
  395. CMOS Inverter
  396. NMOS Pull-Down
  397. PMOS Pull-Up
  398. Complementary Operation
  399. Static Power CMOS
  400. Dynamic Power CMOS
  401. FinFET Structure
  402. FinFET Operation
  403. Gate-All-Around Transistor
  404. SOI MOSFET
  405. Fully Depleted SOI
  406. Partially Depleted SOI
  407. Multi-Gate Transistor
  408. Nanowire Transistor
  409. Scaling Laws MOSFET
  410. Dennard Scaling
  411. International Roadmap Devices
  412. Light-Emitting Diode
  413. LED Operation Principle
  414. LED Materials
  415. Direct Bandgap LED Requirement
  416. LED Efficiency
  417. Internal Quantum Efficiency
  418. External Quantum Efficiency
  419. Light Extraction Efficiency
  420. LED Wavelength Selection
  421. White LED Technology
  422. Phosphor Conversion LED
  423. Laser Diode
  424. Laser Operation Principle
  425. Population Inversion
  426. Optical Gain
  427. Threshold Current Density
  428. Laser Cavity
  429. Fabry-Perot Cavity
  430. Distributed Bragg Reflector
  431. Distributed Feedback Laser
  432. Vertical Cavity Surface Emitting Laser
  433. VCSEL Structure
  434. Double Heterostructure Laser
  435. Quantum Well Laser
  436. Semiconductor Optical Amplifier
  437. Photodiode Structure
  438. PIN Photodiode
  439. Photodiode Responsively
  440. Quantum Efficiency Photodiode
  441. Photodiode Dark Current
  442. Photodiode Bandwidth
  443. Avalanche Photodiode
  444. APD Gain
  445. APD Noise
  446. Solar Cell Operation
  447. Photovoltaic Effect
  448. Solar Cell I-V Curve
  449. Short-Circuit Current
  450. Open-Circuit Voltage
  451. Fill Factor Solar Cell
  452. Power Conversion Efficiency
  453. Shockley-Queisser Limit
  454. Single-Junction Solar Cell
  455. Multi-Junction Solar Cell
  456. Tandem Solar Cell
  457. Solar Cell Losses
  458. Recombination Losses Solar Cell
  459. Thermalization Losses
  460. Charge-Coupled Device
  461. CCD Operation
  462. CMOS Image Sensor
  463. Pixel Architecture
  464. Read Noise
  465. III-V Semiconductor Compounds
  466. GaAs Properties
  467. InP Properties
  468. InGaAs Properties
  469. AlGaAs Properties
  470. InGaAsP Properties
  471. II-VI Semiconductor Compounds
  472. Wide-Bandgap Semiconductors
  473. GaN Material Properties
  474. GaN Crystal Growth
  475. AlGaN Alloy
  476. AlGaN/GaN Heterostructure
  477. SiC Polytypes
  478. SiC Properties
  479. Quantum Well Structure
  480. Quantum Well Energy Levels
  481. Quantum Well Wave Functions
  482. Subband Structure
  483. Quantum Wire
  484. Quantum Dot
  485. Quantum Dot Energy Levels
  486. Size Quantization
  487. Confinement Energy
  488. 2D Electron Gas
  489. 2DEG Formation
  490. High Electron Mobility Transistor
  491. HEMT Structure
  492. HEMT Operation
  493. Pseudomorphic HEMT
  494. Metamorphic HEMT
  495. Strained Silicon
  496. Strain Effects on Band Structure
  497. Biaxial Strain
  498. Uniaxial Strain
  499. Critical Thickness
  500. Pseudomorphic Layers
  501. Graphene Properties
  502. Graphene Band Structure
  503. Graphene Dirac Points
  504. Graphene Mobility
  505. Transition Metal Dichalcogenides
  506. Molybdenum Disulfide MoS2
  507. TMD Band Structure
  508. 2D Materials Overview
  509. Van der Waals Heterostructures
  510. Carbon Nanotube Properties
  511. Carbon Nanotube Band Structure
  512. Power Diode Structure
  513. Power Diode Ratings
  514. Thyristor Structure
  515. Thyristor Operation
  516. Silicon-Controlled Rectifier
  517. IGBT Structure
  518. IGBT Operation
  519. Power MOSFET
  520. Superjunction MOSFET
  521. High-Voltage Device Design
  522. Breakdown Engineering
  523. Punch-Through Voltage
  524. Gunn Diode
  525. Gunn Effect
  526. Transferred Electron Effect
  527. IMPATT Diode
  528. Negative Resistance Devices
  529. Microwave Device Parasitics
  530. Cutoff Frequency High-Frequency
  531. Czochralski Crystal Growth
  532. Float-Zone Crystal Growth
  533. Crystal Ingot Processing
  534. Wafer Preparation
  535. Epitaxial Growth
  536. Molecular Beam Epitaxy
  537. Metal-Organic CVD
  538. Chemical Vapor Deposition
  539. Thermal Oxidation of Silicon
  540. Deal-Grove Model
  541. Dry Oxidation
  542. Wet Oxidation
  543. Diffusion in Solids
  544. Fick First Law
  545. Fick Second Law
  546. Diffusion Coefficient Thermal
  547. Ion Implantation
  548. Ion Range Distribution
  549. Channeling Effect
  550. Annealing Post-Implant
  551. Photolithography Process
  552. Photoresist
  553. Exposure and Development
  554. Mask Alignment
  555. Etching Processes
  556. Wet Chemical Etching
  557. Dry Etching RIE
  558. Plasma Etching
  559. Thin Film Deposition
  560. Physical Vapor Deposition
  561. Sputtering
  562. Metallization
  563. Aluminum Interconnects
  564. Copper Interconnects
  565. Silicide Formation
  566. Contact Resistance Fabrication
  567. Process-Induced Defects
  568. Contamination Control
  569. Yield Engineering Overview
  570. Device Characterization Methods
  571. I-V Measurement
  572. C-V Measurement
  573. Hall Measurement
  574. Four-Point Probe
  575. DLTS Technique
  576. Optical Characterization
  577. Photoluminescence Spectroscopy
  578. Electroluminescence
  579. Raman Spectroscopy
  580. Transmission Electron Microscopy
  581. Scanning Electron Microscopy
  582. Secondary Ion Mass Spectrometry
  583. Auger Electron Spectroscopy
  584. SPICE Compact Models
  585. Level-1 MOSFET Model
  586. BSIM Model
  587. Small-Signal Equivalent Circuit
  588. Large-Signal Device Model
  589. Noise in Semiconductor Devices
  590. Thermal Noise
  591. Shot Noise
  592. Flicker Noise
  593. Noise Figure
  594. Band-to-Band Tunneling
  595. Esaki Tunnel Diode
  596. Resonant Tunneling Diode
  597. Double Barrier Structure
  598. Negative Differential Resistance
  599. Ballistic Transport
  600. Quantum Confinement Effects